Methods of removing material from a semiconductor substrate

Details Methods of removing material from a semiconductor substrate Methods of removing material from a semiconductor substrate

2005-12-20

2005-12-20

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C134S001100, C134S001200

Reexamination Certificate

active

06977230

ABSTRACT:
The invention encompasses a method of removing at least some of a material from a semiconductor substrate. A feed gas is fed through an ozone generator to generate ozone. The feed gas comprises at least 99.999% O2(by volume). The ozone, or a fragment of the ozone, is contacted with a material on a semiconductor substrate to remove at least some of the material from the semiconductor substrate. The invention also encompasses another method of removing at least some of a material from a semiconductor substrate. A mixture of ozone and organic solvent vapors is formed in a reaction chamber. At least some of the ozone and solvent vapors are contacted with a material on a semiconductor substrate to remove at least some of the material from the semiconductor substrate.

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Abstract of Article: Voigt, K. et al., “A Little Nitrogen Goes a Long Way in Ozone Production . . . Or The Addition of Nitrogen Gas to Pure Oxygen Ozone Generators to Achieve Greater Generator Efficiency”, 1994 Annual Conf. Proceedings, American Water Works Assn., New York, NY, Jun. 19-23, 1994, pp. 885-900.

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