Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-06-28
2005-06-28
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S783000, C438S788000
Reexamination Certificate
active
06911403
ABSTRACT:
A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.
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Huang Tzu-Fang
Lee Peter Wai-Man
Li Lihua
Silvetti Mario David
Sivaramakrishnan Visweswaren
Applied Materials Inc.
Moser Patterson & Sheridan
Nguyen Tuan H.
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