Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-01-11
2011-01-11
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C257SE21170, C257SE21280, C257SE21584, C257SE23019, C257SE23144, C257S329000, C257S330000, C257S331000, C257S341000, C438S424000, C438S672000, C438S619000, C438S099000, C438S022000
Reexamination Certificate
active
07867924
ABSTRACT:
A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.
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Ahn Sang-hoon
Baek Eun-kyung
Choi Jong-wan
Choi Yong-soon
Kim Hong-gun
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Singal Ankush k
Toledo Fernando L
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