Methods of reducing impurity concentration in isolating...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C257SE21170, C257SE21280, C257SE21584, C257SE23019, C257SE23144, C257S329000, C257S330000, C257S331000, C257S341000, C438S424000, C438S672000, C438S619000, C438S099000, C438S022000

Reexamination Certificate

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07867924

ABSTRACT:
A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is between the lower and upper semiconductor substrates. Upper trenches are formed within the upper semiconductor substrate. An upper device isolating film is formed within the upper trenches. The upper device isolating film is irradiated with ultraviolet light having a wavelength configured to break chemical bonds of impurities in the upper device isolating film to reduce an impurity concentration thereof.

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