Methods of reducing floating body effect

Details Methods of reducing floating body effect Methods of reducing floating body effect

2007-02-12

2008-05-06

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S238000, C438S270000, C257S306000, C257S330000, C257S308000, C257S296000, C257SE27086, C257SE21648

Reexamination Certificate

active

07368344

ABSTRACT:
Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion region and the accompanying electrostatic potential created. In a preferred embodiment, a word line is recessed into the substrate to tie the upper active region to the substrate. The resulting memory cells are preferably used in dynamic random access memory (DRAM) devices.

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