Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-03-13
2009-11-10
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257SE23182, C257S706000, C257S707000, C361S072000, C361S074000
Reexamination Certificate
active
07615861
ABSTRACT:
A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.
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International Preliminary Report and Written Opinion dated Sep. 25, 2007. in PCT Application No. PCT/US2007/006234.
Chang Che-Jung
Chien Jack Chang
Chiu Chin-Tien
Liu Ning
Takiar Hem
Chu Chris C
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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