Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-20
2009-06-23
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S669000, C438S736000, C430S312000
Reexamination Certificate
active
07550383
ABSTRACT:
There are provided methods of performing a photolithography process for forming asymmetric semiconductor patterns and methods of forming a semiconductor device using the same. These methods provide a way of forming asymmetric semiconductor patterns on a photoresist layer through two exposure processes. To this end, a semiconductor substrate is prepared. A planarized insulating interlayer and a photoresist layer are sequentially formed on the overall surface of the semiconductor substrate. A first semiconductor pattern of a photolithography mask is transferred to the photoresist layer, thereby forming a photoresist pattern on the photoresist layer. A second semiconductor pattern of a second photolithography mask is continuously transferred to the photoresist layer, thereby forming a second photoresist pattern on the photoresist layer. An etching process is performed on the planarized insulating interlayer to expose the semiconductor substrate, using the first photoresist pattern and the second photoresist pattern as etch masks.
REFERENCES:
patent: 6048647 (2000-04-01), Miyazaki et al.
patent: 6329306 (2001-12-01), Nakao
patent: 2002/0012851 (2002-01-01), Coronel et al.
patent: 2004/0063000 (2004-04-01), Maurer et al.
patent: 2001-047253 (2001-06-01), None
patent: 2002-053475 (2002-07-01), None
patent: 2004-046702 (2004-06-01), None
Cho Han-Ku
Kim Byeong-Soo
Kim Tae-Young
Park Joon-Soo
Woo Sang-Gyun
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Trinh Michael
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