Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-11-30
2010-02-09
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100, C365S189050
Reexamination Certificate
active
07660170
ABSTRACT:
A non-volatile memory device includes a latch unit, a non-volatile memory cell array configured to store data, and a control unit. The control unit is configured to receive a read command and a read address output from a memory controller, generate a data strobe signal based on the received read command, read data corresponding to the received read address from the non-volatile memory cell array, and output the read data to the latch unit. The latch unit is configured to output the data output from the control unit to the memory controller in response to the data strobe signal. Related methods of operation are also discussed.
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Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Yoha Connie C
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