Methods of operating ferroelectric memory devices having linear

Details Methods of operating ferroelectric memory devices having linear Methods of operating ferroelectric memory devices having linear

1999-09-14

2000-03-07

Phan, Trong

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 27108

Patent

active

060343877

ABSTRACT:
Nonvolatile ferroelectric-based integrated circuit memory devices utilize reference cells containing linear storage capacitors to inhibit deterioration in reliability typically associated with ferroelectric capacitors which have undergone excessive polarization cycling. These linear storage capacitors are preferably coupled to respective plate lines so that efficient reading operations may be performed. In particular, a nonvolatile memory device is preferably provided which contains a ferroelectric memory cell having an access transistor and a ferroelectric storage capacitor therein. A reference cell is also provided and this reference cell contains an access transistor and a linear storage capacitor therein. In addition, a sense amplifier is provided which has first and second inputs electrically coupled to the access transistors of the ferroelectric memory cell and the reference cell, respectively. To improve the efficiency of reading operations, a reset transistor is preferably provided and this transistor is electrically connected in series between the second input of the sense amplifier and a reference signal line (e.g., ground signal line).

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