Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-07-27
2011-10-18
Phung, Anh (Department: 2824)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21004, C257SE21520, C438S102000, C438S103000, C438S692000
Reexamination Certificate
active
08039372
ABSTRACT:
A phase changeable memory device is manufactured by forming at least one insulating layer on a substrate. A preliminary first electrode is formed on the insulating layer. The preliminary first electrode is partially etched to form a first electrode electrically connected to the substrate. After the preliminary first electrode is formed, both sidewalls of the preliminary first electrode are partially etched isotropically to form a first electrode having a uniform width and height. A phase changeable material layer pattern and a second electrode are subsequently formed on the first electrode. Related devices also are described.
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Kim Tae-Eun
Min Chung-Ki
Yoon Byoung-Moon
Lulis Michael
Myers Bigel Sibley & Sajovec P.A.
Phung Anh
Samsung Electronics Co,. Ltd.
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