Methods of manufacturing semiconductor devices including a...

Details Methods of manufacturing semiconductor devices including a... Methods of manufacturing semiconductor devices including a...

2008-09-23

2011-11-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S766000, C438S480000, C438S502000, C438S166000, C438S306000, C257SE21090, C257SE21134, C257SE21347, C257S795000, C257S072000, C257S073000, C257S074000

Reexamination Certificate

active

08048784

ABSTRACT:
Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer containing amorphous silicon material is formed on the seed layer. The amorphous silicon layer is doped with an impurity. A laser beam is irradiated onto the amorphous silicon layer to produce a phase change of the amorphous silicon layer and change the amorphous silicon layer into a single-crystal silicon layer based on the seed layer.

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