Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-23
2010-06-08
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S233000, C438S238000, C438S256000, C438S396000, C257SE21507, C257SE21537
Reexamination Certificate
active
07732323
ABSTRACT:
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.
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Chung Tae-young
Lee Ju-yong
Park Mi-kyung
Sung Joon-ho
Choi Calvin
Mulpuri Savitri
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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