Methods of manufacturing semiconductor devices having...

Details Methods of manufacturing semiconductor devices having... Methods of manufacturing semiconductor devices having...

2007-10-09

2007-10-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S957000

Reexamination Certificate

active

10750246

ABSTRACT:
An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/N2plasma, and removing polymer existing on the lower metal layer by using H2O/CF4plasma. According to one example, the capacitor may include a lower electrode film, the capacitor insulating film and the upper electrode film.

REFERENCES:
patent: 6599829 (2003-07-01), Smith et al.
patent: 6794298 (2004-09-01), Shields et al.
patent: 2001/0044214 (2001-11-01), Izawa
patent: 2003/0114010 (2003-06-01), Jung

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