Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-05
2009-11-10
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S263000
Reexamination Certificate
active
07615817
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a pillar-shaped active region by etching a portion of a semiconductor substrate, forming a blocking film selectively exposing a sidewall of a lower portion of the pillar-shaped active region, and forming a bit-line selectively on the exposed sidewall of the lower portion of the pillar-shaped active region.
REFERENCES:
patent: 5828094 (1998-10-01), Lee
patent: 5909618 (1999-06-01), Forbes et al.
patent: 6218236 (2001-04-01), Economikos et al.
patent: 6777725 (2004-08-01), Willer et al.
patent: 7348628 (2008-03-01), Yoon et al.
patent: 10-2004-0096339 (2004-11-01), None
Kim Hyun-su
Kim Sung-tae
Lee Eun-ok
Lee Ho-ki
Lee Sang-woo
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Vu David
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