Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2011-07-12

2011-07-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S303000, C257SE21487

Reexamination Certificate

active

07977257

ABSTRACT:
In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium source and a first oxidizing gas. A zirconium carbo-oxynitride layer is formed on the first zirconium oxide layer by performing a second deposition process using a second zirconium source, a second oxidizing gas and a nitriding gas, and an upper electrode is formed on the zirconium carbo-oxynitride layer. A zirconium oxide-based composite layer having a high dielectric constant and a thin equivalent oxide thickness can be obtained.

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patent: 2006/0121671 (2006-06-01), Yamamoto et al.
patent: 2004-296582 (2004-10-01), None
patent: 10-2006-0052474 (2006-05-01), None
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