Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2008-06-20

2010-06-08

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S535000, C438S303000, C438S597000, C257SE21149

Reexamination Certificate

active

07732311

ABSTRACT:
In a method of manufacturing a semiconductor device, a conductive layer pattern may be formed on a substrate. An oxide layer may be formed on the substrate to cover the conductive layer pattern. A diffusion barrier layer may be formed by treating the oxide layer to increase an energy required for a diffusion of impurities. An impurity region may be formed on the substrate by implanting impurities into the conductive layer pattern and a portion of the substrate adjacent to the conductive layer pattern, through the diffusion barrier. The impurities in the conductive layer pattern and the impurity region may be prevented or reduced from diffusing, and therefore, the semiconductor device may have improved performance.

REFERENCES:
patent: 6323519 (2001-11-01), Gardner et al.
patent: 6534388 (2003-03-01), Lin et al.
patent: 2005/0181591 (2005-08-01), Tsuno
patent: 10-0361576 (2002-11-01), None
patent: 0668954 (2007-01-01), None

Affiliated with

Also associated with

Rating

Methods of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4195301