Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-12-12
2000-04-04
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 14, 117 15, 117201, 117202, C30B 1520
Patent
active
060456108
ABSTRACT:
A silicon ingot is manufactured in a hot zone furnace by pulling the ingot from a silicon melt in the hot zone furnace in an axial direction, at a pull rate profile of the ingot from the silicon melt in the hot zone furnace that is sufficiently high so as to prevent interstitial agglomerates but is sufficiently low so as to confine vacancy agglomerates to a vacancy rich region at the axis of the ingot. The ingot so pulled is sliced into a plurality of semi-pure wafers each having a vacancy rich region at the center thereof that includes vacancy agglomerates and a pure region between the vacancy rich region and the wafer edge that is free of vacancy agglomerates and interstitial agglomerates. According to another aspect of the present invention, the ingot is pulled from the silicon melt in the hot zone furnace at a pull rate profile of the ingot from the silicon melt in the hot zone furnace that is sufficiently high so as to prevent interstitial agglomerates, but is also sufficiently low as to prevent vacancy agglomerates. Accordingly, when this ingot is sliced into wafers, the wafers are pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates.
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Voronkov, "The Mechanism of Swirl Defects Formation in Silicon", Journal of Crystal Growth, V. 59, 1982, pp. 625-643.
Cho Kyoo-chul
Lee Gon-sub
Park Jea-gun
Hiteshew Felisa
Samsung Electronics Co,. Ltd.
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