Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-09-02
2008-08-12
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C977S762000, C977S811000
Reexamination Certificate
active
07410912
ABSTRACT:
Metal oxide nanowires are being investigated to make nanodevices and nanosensors. High operation temperatures or vacuum is required in the manufacturing of metal oxide nanowires by existing vapor phase evaporation methods. This invention provides a method of manufacturing metal oxide nanowires by first providing a metal to form a non-linear substantially planar structure defining a surface. The metal is then heated and maintained at a temperature from 300 to 800° C., and then exposed to oxygen and water vapor containing air stream for a sufficient period of time to form the metal oxide nanowires. The oxygen containing air stream flows in a direction substantially parallel to the plane of the structure. Relatively low temperatures may be used and no vacuum is required in this method, thereby reducing the overall manufacturing costs. Further, this method is able to manufacture different densities of the metal oxide nanowires simultaneously.
REFERENCES:
patent: 2531535 (1950-11-01), Glover et al.
patent: 6781166 (2004-08-01), Lieber et al.
patent: 6916696 (2005-07-01), Buynoski
Zheng Wei Pan et al., Nanobelts of Semiconducting Oxides, Science, Mar. 9, 2001, pp. 1947-1949, vol. 291.
Daihua Zhang et al., Detection of NO2down to ppb Levels Using Individual and Multiple In2O3Nanowire Devices, Nano Lett., 2004, pp. 1919-1924, vol. 4, No. 10.
A. Kolmakov et al., Enhanced Gas Sensing by Individual SnO2Nanowires and Nanobelts Functionalized with Pd Catalyst Particles, Nano Lett. 2005, pp. 667-673, vol. 5, No. 4.
Liu Yang
Shi San-Qiang
Woo Chung Ho
Xu Chunhua
Buchanan & Ingersoll & Rooney PC
Estrada Michelle
The Hong Kong Polytechnic University
Tobergte Nicholas J.
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