Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-07-28
2008-12-02
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S591000, C438S763000, C438S785000
Reexamination Certificate
active
07459372
ABSTRACT:
The present invention can provide methods of manufacturing a thin film including hafnium titanium oxide. The methods can include introducing a first reactant including a hafnium precursor onto a substrate; chemisorbing a first portion of the first reactant to the substrate, and physisorbing a second portion of the first reactant to the substrate and the chemisorbed first portion of the first reactant; providing a first oxidant onto the substrate; forming a first thin film including hafnium oxide on the substrate; introducing a second reactant including a titanium precursor onto the first thin film; chemisorbing a first portion of the second reactant to the first thin film, and physisorbing a second portion of the second reactant to the first thin film and the chemisorbed first portion of the second reactant; providing a second oxidant onto the first thin film; and forming a second thin film including titanium oxide on the first thin film. The present invention can further provide methods of manufacturing a gate structure and a capacitor.
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Notice to Submit Response, KR 10-2004-0056865, Dec. 16, 2005.
Beom-Jun Jin et al., “Methods of Forming a Thin Layer Including Hafnium Silicon Oxide Using Atomic Layer Deposition and Methods of Forming a Gate Structure and a Capacitor Including the Same”, U.S. Appl. No. 11/180,121, filed Jul. 13, 2005.
Kang Sang-Bom
Park Hong-Bae
Shin Yu-Gyun
Myers Bigel & Sibley Sajovec, PA
Pert Evan
Samsung Electronics Co,. Ltd.
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