Methods of manufacturing a stressed MOS transistor structure

Details Methods of manufacturing a stressed MOS transistor structure Methods of manufacturing a stressed MOS transistor structure

2008-03-04

2008-03-04

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S202000

Reexamination Certificate

active

11024259

ABSTRACT:
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.

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