Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S283000, C438S429000, C438S480000, C438S584000, C438S587000, C257SE21633, C257SE21642
Reexamination Certificate
active
08003458
ABSTRACT:
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor having a second active area. A top surface of the first active area is elevated or recessed with respect to a top surface of the second active area, or a top surface of the first active area is elevated or recessed with respect to a top surface of at least portions of an isolation region proximate the first transistor.
REFERENCES:
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4948745 (1990-08-01), Pfiester et al.
patent: 5166082 (1992-11-01), Nakamura et al.
patent: 5479033 (1995-12-01), Baca et al.
patent: 5888853 (1999-03-01), Gardner et al.
patent: 6531376 (2003-03-01), Cai et al.
patent: 6653181 (2003-11-01), Hergenrother et al.
patent: 6940129 (2005-09-01), Kim et al.
patent: 7221056 (2007-05-01), Yamamoto et al.
patent: 7368333 (2008-05-01), Kim
patent: 7381989 (2008-06-01), Kim et al.
patent: 7384849 (2008-06-01), Parekh et al.
patent: 7432185 (2008-10-01), Kim et al.
patent: 7514313 (2009-04-01), Zia et al.
patent: 7550343 (2009-06-01), Wasshuber
patent: 7585711 (2009-09-01), Chen et al.
patent: 7678675 (2010-03-01), Chambers et al.
patent: 2005/0127408 (2005-06-01), Doris et al.
patent: 2005/0133874 (2005-06-01), Goda et al.
patent: 2005/0275021 (2005-12-01), Matsumoto et al.
patent: 2006/0102959 (2006-05-01), Kim et al.
patent: 2006/0244029 (2006-11-01), Moens et al.
patent: 2006/0278933 (2006-12-01), Endo
patent: 2007/0069293 (2007-03-01), Kavalieros et al.
patent: 2007/0132034 (2007-06-01), Curello et al.
patent: 2007/0218659 (2007-09-01), Spencer et al.
patent: 2007/0267753 (2007-11-01), Luo et al.
patent: 2008/0023769 (2008-01-01), Shin et al.
patent: 2008/0128807 (2008-06-01), Fukushima et al.
patent: 2008/0199990 (2008-08-01), Parekh
patent: 2008/0237733 (2008-10-01), Chen et al.
patent: 2008/0274594 (2008-11-01), Karve et al.
patent: 2008/0274595 (2008-11-01), Spencer et al.
patent: 2008/0283934 (2008-11-01), Luo et al.
patent: 2008/0308872 (2008-12-01), Bu et al.
patent: 2009/0173980 (2009-07-01), Cheng et al.
patent: 2009/0218632 (2009-09-01), Cheng
Seidel, H., et al., “Anistropic Etching of Crystalline Silicon in Alkaline Solutions,” J. Electrochem. Soc., vol. 137, No. 11, Nov. 1990, The Electrochemical Society, Inc., pp. 3626-3632.
Huebinger Frank
Lindsay Richard
Duong Khanh B
Infineon - Technologies AG
Slater & Matsil L.L.P.
Smith Zandra
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