Methods of manufacturing a semiconductor device with active...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S283000, C438S429000, C438S480000, C438S584000, C438S587000, C257SE21633, C257SE21642

Reexamination Certificate

active

08003458

ABSTRACT:
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor having a second active area. A top surface of the first active area is elevated or recessed with respect to a top surface of the second active area, or a top surface of the first active area is elevated or recessed with respect to a top surface of at least portions of an isolation region proximate the first transistor.

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