Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-02-08
2005-02-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S230000, C438S265000, C438S303000, C438S595000, C257S900000
Reexamination Certificate
active
06852581
ABSTRACT:
According to embodiments of the present invention, methods of manufacturing a semiconductor device, and semiconductor devices manufactured thereby, are provided. A field region is formed that defines active regions in a semiconductor substrate. Spaced apart gates are formed on the active regions in the semiconductor substrate. The gates have sidewalls that extend away from the semiconductor substrate. First spacers are formed on the sidewalls of the gates. Second spacers are formed on the first spacers and opposite to the gates. Ion impurities are implanted into the active regions in the semiconductor substrate, adjacent to the gates, using the first and second spacers as an ion implantation mask. A portion of the second spacers is removed to widen the gaps between the gates. A dielectric layer is formed on the semiconductor substrate in the gaps between the gates.
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Notice to Submit Response; Korean Application No. 10-2001-0064775 (from Korean Patent Office) w/English Translation; May 26, 2003.
Chun Yoon-soo
Kim Ki-nam
Shin Dong-won
Huynh Andy
Myers Bigel & Sibley & Sajovec
Nelms David
Samsung Electronics Co,. Ltd.
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