Methods of manufacturing a semiconductor device

Details Methods of manufacturing a semiconductor device Methods of manufacturing a semiconductor device

2008-05-20

2008-05-20

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

Reexamination Certificate

active

07375003

ABSTRACT:
In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.

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patent: 1996-0019709 (1996-06-01), None
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