Methods of manufacturing a semiconductor device

Details Methods of manufacturing a semiconductor device Methods of manufacturing a semiconductor device

2011-07-19

2011-07-19

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S673000, C257S288000

Reexamination Certificate

active

07981784

ABSTRACT:
Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.

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