Methods of growing epitaxial silicon

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...

Reexamination Certificate

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C257SE21132, C257SE21461

Reexamination Certificate

active

07115489

ABSTRACT:
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.

REFERENCES:
patent: 4401687 (1983-08-01), Rosler et al.
patent: 5073516 (1991-12-01), Moslehi
patent: 6680229 (2004-01-01), Nuttall et al.
patent: 6696713 (2004-02-01), Ishibashi
patent: 11233518 (1999-08-01), None

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