Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-03-29
2011-03-29
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S714000, C204S192120
Reexamination Certificate
active
07914692
ABSTRACT:
A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V
sec and not higher than 10000 V
sec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.
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Kondo Yoshimasa
Saito Takao
Terazawa Tatsuya
Burr & Brown
Culbert Roberts
NGK Insulators Ltd.
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