Methods of forming wells in semiconductor devices

Details Methods of forming wells in semiconductor devices Methods of forming wells in semiconductor devices

2007-11-27

2007-11-27

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S223000, C438S449000

Reexamination Certificate

active

11025121

ABSTRACT:
Disclosed herein are methods of forming a well in a semiconductor device, in which a well end point under a trench is formed deeper than other area by well implantation prior to trench filling and by which leakage current is minimized. In one example, the disclosed method includes forming a trench in a surface of a substrate to define a field area, forming a first conductive type well in a first active area of the substrate, forming a second conductive type well in a second active area of the substrate, and filling up the trench with a dielectric.

REFERENCES:
patent: 5071777 (1991-12-01), Gahle
patent: 5206535 (1993-04-01), Namose
patent: 5679588 (1997-10-01), Choi et al.
patent: 5937286 (1999-08-01), Abiko
patent: 6228726 (2001-05-01), Liaw

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