Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-03-08
2011-03-08
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S253000, C438S424000, C257S506000, C257S510000
Reexamination Certificate
active
07902059
ABSTRACT:
In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.
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Kim Jung-Hwan
Kim Young-Seok
Leam Hun-Hyeoung
Lee Jai-Dong
Lee Woong
Dang Phuc T
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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