Methods of forming tungsten contacts by chemical vapor...

Details Methods of forming tungsten contacts by chemical vapor... Methods of forming tungsten contacts by chemical vapor...

2006-11-21

2006-11-21

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C438S656000

Reexamination Certificate

active

07138337

ABSTRACT:
Described are methods of manufacturing a semiconductor device with tungsten contacts between two conductive layers on different interconnect levels. A barrier adhesion layer is formed over interconnect openings followed by a tungsten nucleation film being deposited at a nucleation temperature and a tungsten bulk deposition film being deposited at a bulk deposition temperature, wherein the nucleation temperature is higher than the bulk deposition temperature such that the difference between the nucleation temperature and the bulk deposition temperature improves tungsten gap-fill capability.

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