Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-07
2007-08-07
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000, C438S630000, C438S649000
Reexamination Certificate
active
10757253
ABSTRACT:
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more than 70 ALD cycles) is formed between conductively-doped silicon and a dielectric layer. The conductively-doped silicon can be n-type silicon and the dielectric layer can be a high-k dielectric material. The metal-containing material can be formed directly on the dielectric layer, and the conductively-doped silicon can be formed directly on the metal-containing material. The circuit device can be a capacitor construction or a transistor construction. If the circuit device is a transistor construction, such can be incorporated into a CMOS assembly. Various devices of the present invention can be incorporated into memory constructions, and can be incorporated into electronic systems.
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Eppich Denise M.
Weimer Ronald A.
Lee Hsien-Ming
Micro)n Technology, Inc.
Wells St. John P.S.
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