Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-11
2000-11-21
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438387, 438253, 438149, H01L 218242
Patent
active
061502111
ABSTRACT:
Methods of forming capacitors and related integrated circuitry are described. In a preferred embodiment, the capacitors form part of a dynamic random access memory (DRAM) cell. According to one aspect of the invention, a first insulating layer is formed over a semiconductive material layer. A conductive gate is formed over the semiconductive material layer. A second insulating layer is formed over the gate and thereafter etched to form a capacitor container. In one implementation, such etch is conducted to outwardly expose the semiconductive material layer. In another implementation, such etch continues into the semiconductive material layer. In yet another implementation, such etch is conducted completely through the semiconductive material layer and into the first insulating layer. In a preferred implementation, a storage capacitor is formed within the capacitor container which extends both elevationally above and elevationally below the gate. According to another aspect of the invention, adjacent word lines are formed over the first insulating layer and source/drain diffusion regions are formed within the semiconductive material laterally outward of the word lines. Respective capacitor containers are etched into the diffusion regions and capacitors are formed within the etched containers. In a preferred implementation, storage node material which constitutes part of the capacitors is in electrical contact with the respective diffusion regions and comprises part of a DRAM memory cell.
REFERENCES:
patent: 4794563 (1988-12-01), Maeda
patent: 4855952 (1989-08-01), Kiyosumi
patent: 5001526 (1991-03-01), Gotou
patent: 5065215 (1991-11-01), Kubota
patent: 5124765 (1992-06-01), Kim et al.
patent: 5223730 (1993-06-01), Rhodes
patent: 5225698 (1993-07-01), Kim et al.
patent: 5386131 (1995-01-01), Sato
patent: 5405801 (1995-04-01), Han et al.
patent: 5406102 (1995-04-01), Oashi
patent: 5512501 (1996-04-01), Hidaka
patent: 5521111 (1996-05-01), Sato
patent: 5594682 (1997-01-01), Lu et al.
patent: 5618745 (1997-04-01), Kita
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5795804 (1998-08-01), Jenq
patent: 5801413 (1998-09-01), Pan
patent: 5811283 (1998-09-01), Sun
Micro)n Technology, Inc.
Tsai Jey
LandOfFree
Methods of forming storage capacitors in integrated circuitry me does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming storage capacitors in integrated circuitry me, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming storage capacitors in integrated circuitry me will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256020