Methods of forming SRAM constructions

Details Methods of forming SRAM constructions Methods of forming SRAM constructions

2008-04-15

2008-04-15

Rose, Kiesha (Department: 4176)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27098, C257SE21661, C257S288000, C257S347000, C257S348000, C438S621000, C438S348000, C438S517000, C438S197000

Reexamination Certificate

active

11350201

ABSTRACT:
The invention includes SRAM constructions comprising at least one transistor device having an active region extending into a crystalline layer comprising Si/Ge. A majority of the active region within the crystalline layer is within a single crystal of the crystalline layer, and in particular aspects an entirety of the active region within the crystalline layer is within a single crystal of the crystalline layer. The SRAM constructions can be formed in semiconductor on insulator assemblies, and such assemblies can be supported by a diverse range of substrates, including, for example, glass, semiconductor substrates, metal, insulative materials, and plastics. The invention also includes electronic systems comprising SRAM constructions.

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