Methods of forming split-gate non-volatile memory devices

Details Methods of forming split-gate non-volatile memory devices Methods of forming split-gate non-volatile memory devices

2008-01-22

2008-01-22

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S267000, C438S593000, C438S596000

Reexamination Certificate

active

11368247

ABSTRACT:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

REFERENCES:
patent: 6251727 (2001-06-01), Chen
patent: 6274436 (2001-08-01), Kao et al.
patent: 6465838 (2002-10-01), Hsieh
patent: 7214589 (2007-05-01), Liu et al.
patent: 2002/0093044 (2002-07-01), Hsieh et al.
patent: 2003/0127684 (2003-07-01), Yoo et al.
patent: 20030124360 (2003-04-01), None
patent: 0142604 (1998-04-01), None
patent: 20010060548 (2001-07-01), None
Korean Patent Abstract for 100142604.
Korean Patent Abstract for 10-2001-0060548.
Korean Patent Abstract for 2003-124360.

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