Methods of forming silicon quantum dots and methods of...

Details Methods of forming silicon quantum dots and methods of... Methods of forming silicon quantum dots and methods of...

2007-05-15

2007-05-15

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S962000, C438S488000

Reexamination Certificate

active

11027516

ABSTRACT:
The disclosure provides methods of forming a silicon quantum dots for application in a semiconductor memory device. One example method includes sequentially forming a pad oxide film and a sacrificial insulation film on a silicon substrate; forming a wall layer by selectively etching the sacrificial insulation film; forming a spacer at the side wall of the wall layer; etching the silicon substrate as much as a predetermined thickness using the spacer as a mask, thereby forming a silicon pattern; forming a barrier film for burying the upper surface and the side surface of the silicon pattern; applying isotropic etching to the substrate using the barrier film as a mask; and oxidizing the isotropic etched substrate with thermal treatment.

REFERENCES:
patent: 6346436 (2002-02-01), Fukushima et al.
patent: 6351007 (2002-02-01), Fukushima et al.
patent: 10-2000-057981 (2000-09-01), None
patent: 10-2001-104946 (2001-11-01), None

Affiliated with

Also associated with

Rating

Methods of forming silicon quantum dots and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming silicon quantum dots and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming silicon quantum dots and methods of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3777221