Methods of forming silicon nitride layers using nitrogenous...

Details Methods of forming silicon nitride layers using nitrogenous... Methods of forming silicon nitride layers using nitrogenous...

2005-01-07

2009-02-10

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S792000, C257SE21293

Reexamination Certificate

active

07488694

ABSTRACT:
The present invention provides nitrogenous compositions for forming a silicon nitride layer, wherein the nitrogenous composition comprises a hydrazine compound, an amine compound or a mixture thereof. The present invention further provides source compositions for forming a silicon nitride layer, wherein the source composition comprises a nitrogenous composition comprising a hydrazine compound, an amine compound or a mixture thereof, and a silicon source comprising hexachlorodisilane. Methods for forming silicon nitride layers are further provided. The silicon nitride layers provided herein may be formed on a substrate at a low temperature and may further exhibit improved breakdown voltage and an enhanced etch resistance.

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Notice to Submit a Response for Korean Patent Application No. 10-2004-0001117 mailed on Oct. 24, 2005.

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