Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S649000, C438S655000, C257SE21593
Reexamination Certificate
active
10974417
ABSTRACT:
A method of forming a silicide film can include forming a first metal film on a silicon substrate and forming a second metal film on the first metal film at a temperature sufficient to react a first portion of the first metal film in contact with the silicon substrate to form a metal-silicide film. The second metal film and a second portion of the first metal film can be removed so that a thin metal-silicide film remains on the silicon substrate. Then, a metal wiring film can be formed on the thin metal-silicide film and the metal wiring film can be etched.
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Notice to Submit a Response for Korean Patent Application No. 10-2004-0081986 mailed on Feb. 24, 2006.
Choi Gil-heyun
Jung Eun-ji
Jung Sug-woo
Kang Sang-bom
Kim Hyun-su
Myers Bigel Sibley & Sajovec P.A.
Picardat Kevin M.
Samsung Electronics Co,. Ltd.
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