Methods of forming silicide

Details Methods of forming silicide Methods of forming silicide

2008-07-15

2008-07-15

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S682000, C438S683000, C257S755000, C257S768000, C257SE21165

Reexamination Certificate

active

07399702

ABSTRACT:
Methods of fully siliciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material. The device is heated, causing atoms of the semiconductive material to move towards and bond to the atoms of the second metal, leaving vacancies in the semiconductive material, and causing atoms of the first metal to move into the vacancies in the semiconductive material.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5384285 (1995-01-01), Sitaram et al.
patent: 5780362 (1998-07-01), Wang et al.
patent: 5902129 (1999-05-01), Yoshikawa et al.
patent: 5953612 (1999-09-01), Lin et al.
patent: 5970370 (1999-10-01), Besser et al.
patent: 6091152 (2000-07-01), Iwata
patent: 6121139 (2000-09-01), Chang et al.
patent: 6150249 (2000-11-01), Lee et al.
patent: 6274511 (2001-08-01), Wieczorek et al.
patent: 6281102 (2001-08-01), Cao et al.
patent: 6399467 (2002-06-01), Erhardt et al.
patent: 6410429 (2002-06-01), Ho et al.
patent: 6562718 (2003-05-01), Xiang et al.
patent: 6653227 (2003-11-01), Lai et al.
patent: 6673665 (2004-01-01), Wieczorek et al.
patent: 6689673 (2004-02-01), Hsu et al.
patent: 6716745 (2004-04-01), Akram et al.
patent: 6767812 (2004-07-01), Abe et al.
patent: 6767831 (2004-07-01), Chu et al.
patent: 6787464 (2004-09-01), Cheek et al.
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2002/0111018 (2002-08-01), Tai
patent: 2002/0182836 (2002-12-01), Agnello et al.
patent: 2004/0097060 (2004-05-01), San et al.
patent: 2004/0123922 (2004-07-01), Cabral, Jr. et al.
patent: 2004/0132268 (2004-07-01), Koo et al.
patent: 2005/0253204 (2005-11-01), Chan et al.
patent: 2001156287 (2001-06-01), None
Mayer, J.W., et al., “Electronic Materials Science: For Integrated Circuits in Si and GaAs,” 1990, p. 313, Macmillan Publishing Co., NY, US.
Wen, H. C., et al., “Effect on Ni Thickness Dependance on NISI FUSI Metal Gate Characteristics,” Electrochemical and Solid-State Letters, vol. 7, Issue (11), pp. G258 and G260 (2004).

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