Methods of forming SiC MOSFETs with high inversion layer...

Details Methods of forming SiC MOSFETs with high inversion layer... Methods of forming SiC MOSFETs with high inversion layer...

2006-07-14

2010-06-01

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S212000, C438S765000, C257SE21055

Reexamination Certificate

active

07727904

ABSTRACT:
Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.

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