Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1999-10-29
2000-12-12
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438149, 438157, 438479, 438517, 438311, 438910, H01L 2100
Patent
active
061597783
ABSTRACT:
SOI FETs include an electrically insulating substrate, a semiconductor region on the electrically insulating substrate, a field effect transistor having source, drain and channel regions in the semiconductor region and a metal silicide region between the electrically insulating substrate and the semiconductor region. The metal silicide region (e.g., TiSi.sub.2) forms non-rectifying junctions with the source and channel regions of the field effect transistor so that holes accumulated in the channel region (upon impact ionization) can be readily transported to the source region (and contact thereto) via the metal silicide layer and recombination of the holes with electrons in the source region can be carried out with high efficiency. The metal silicide region ohmically contacts the source and channel regions, but does not form a junction with the drain region of said field effect transistor.
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Chaudhuri Olik
Louie Wai-Sing
Samsung Electronics Co,. Ltd.
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