Methods of forming semiconductor devices using di-block...

Details Methods of forming semiconductor devices using di-block... Methods of forming semiconductor devices using di-block...

2007-07-30

2009-10-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S299000, C438S287000, C257SE21205, C257SE21249

Reexamination Certificate

active

07605087

ABSTRACT:
A method of forming a semiconductor device is provided. An interlayer dielectric is formed on a substrate. A di-block polymer layer that includes a plurality of first polymer blocks and a plurality of second polymer blocks is formed on the interlayer dielectric. The di-block polymer layer is divided into a first phase to which the first polymer blocks are bound and a second phase to which the second polymer blocks are bound. The second phase is removed so that at least part of the first phase remains in place, where the remaining first phase defines at least part of a pore. The interlayer dielectric that is exposed beneath the pore is etched to form an opening. The opening may have a smaller width than the minimum feature size that a photolithography process is capable of resolving. As a result, a linewidth of an electrode that may be formed to fill the opening may be reduced.

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