Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-30
2011-08-30
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S430000, C438S486000, C438S689000, C438S690000, C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
08008172
ABSTRACT:
A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization process without exposing the pattern; performing an epitaxy growth process on the first planarized semiconductor layer to form a crystalline semiconductor layer; and planarizing the crystalline semiconductor layer until the pattern is exposed to form a crystalline semiconductor pattern.
REFERENCES:
patent: 6265250 (2001-07-01), Yu
patent: 6737315 (2004-05-01), Kuroi et al.
patent: 7018927 (2006-03-01), Lee
patent: 2003/0054597 (2003-03-01), Kuroi et al.
patent: 2004/0142582 (2004-07-01), Crowder et al.
patent: 2005/0020075 (2005-01-01), Lee
patent: 2005/0062175 (2005-03-01), Buh et al.
patent: 2006/0014390 (2006-01-01), Lee et al.
patent: 2006/0160325 (2006-07-01), Choi
patent: 2006/0258076 (2006-11-01), Mizushima et al.
patent: 2007/0163489 (2007-07-01), Son et al.
patent: 2008/0014726 (2008-01-01), Cha et al.
patent: 2006-32846 (2006-02-01), None
patent: 20010003417 (2001-01-01), None
patent: 20030025819 (2003-03-01), None
patent: 10-2005-0011488 (2005-01-01), None
patent: 20050063045 (2005-06-01), None
patent: 10-0619394 (2006-08-01), None
patent: 100679610 (2007-01-01), None
Choi Suk-Hun
Han Sang-Yeob
Hong Chang-ki
Lim Jong-Heun
Yoon Bo-Un
Jung Michael
Mills & Onello LLP
Richards N Drew
Samsung Electronics Co,. Ltd.
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