Methods of forming semiconductor devices having self-aligned...

Details Methods of forming semiconductor devices having self-aligned... Methods of forming semiconductor devices having self-aligned...

2009-03-24

2011-12-27

Li, Meiya (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S159000, C438S197000, C257S288000, C257S347000, C257S401000, C257SE29120, C257SE21454, C257SE21023

Reexamination Certificate

active

08084306

ABSTRACT:
A semiconductor device includes a body region having a source region, a drain region, a channel region interposed between the source region and the drain region, and a body region extension extending from an end of the channel region. A gate pattern is formed on the channel region and the body region, and a body contact connects the gate pattern to the body region. A sidewall of the body region extension is self-aligned to a sidewall of the gate pattern. Methods of forming semiconductor devices having a self-aligned body and a body contact are also disclosed.

REFERENCES:
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5891783 (1999-04-01), Lin et al.
patent: 6100564 (2000-08-01), Bryant et al.
patent: 6191449 (2001-02-01), Shino
patent: 6528847 (2003-03-01), Liu
patent: 6573577 (2003-06-01), Iwata et al.
patent: 6706569 (2004-03-01), Kim et al.
patent: 6753574 (2004-06-01), Yamaguchi et al.
patent: 2002/0119640 (2002-08-01), Gonzalez
patent: 2003/0025135 (2003-02-01), Matsumoto et al.
patent: 2003/0075719 (2003-04-01), Sriram
patent: 2003/0222313 (2003-12-01), Fechner
patent: 2005/0072975 (2005-04-01), Chen et al.
patent: 2005/0179093 (2005-08-01), Morris
patent: 2006/0019434 (2006-01-01), Jeong et al.
patent: 2001-230423 (2001-08-01), None
patent: 2003-174172 (2003-06-01), None
patent: 100259593 (2000-03-01), None
patent: 10-2003-0088874 (2003-11-01), None
patent: 10-2004-0045904 (2004-06-01), None
Hirano et al. “Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application,”IEDM '03 Technical Digest.IEEE International Electron Devices Meeting, Dec. 8-10, 2003, pp. 2.4.1-2.4.4.

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