Methods of forming semiconductor devices having multiple...

Details Methods of forming semiconductor devices having multiple... Methods of forming semiconductor devices having multiple...

2008-01-08

2008-01-08

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with preceding diverse...

C438S487000, C438S197000, C438S666000

Reexamination Certificate

active

07316968

ABSTRACT:
In a method of manufacturing a semiconductor device, a preliminary active pattern including gate layers and channel layers is formed on a substrate. The gate layers and the channel layers are alternatively stacked. A hard mask is formed on the preliminary active pattern. The preliminary active pattern is partially etched using the hard mask as an etching mask to expose a surface of the substrate. The etched preliminary active pattern is trimmed to form an active channel pattern having a width less than a lower width of the hard mask. Source/drain layers are formed on exposed side faces of the active channel pattern and the surface. The gate layers are selectively etched to form tunnels. A gate encloses the active channel pattern and filling the tunnels. Related intermediate structures are also disclosed.

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Notice to Submit a Response for Korean Patent Application No. 10-2003-0082824 mailed on Jul. 28, 2005.

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