Methods of forming semiconductor devices having buried oxide...

Details Methods of forming semiconductor devices having buried oxide... Methods of forming semiconductor devices having buried oxide...

2008-01-22

2008-01-22

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S700000, C438S225000

Reexamination Certificate

active

07320908

ABSTRACT:
Methods for forming semiconductor devices are provided. A semiconductor substrate is etched such that the semiconductor substrate defines a trench and a preliminary active pattern. The trench has a floor and a sidewall. An insulating layer is provided on the floor and the sidewall of the trench and a spacer is formed on the insulating layer such that the spacer is on the sidewall of the trench and on a portion of the floor of the trench. The insulating layer is removed on the floor of the trench and beneath the spacer such that a portion of the floor of the trench is at least partially exposed, the spacer is spaced apart from the floor of the trench and a portion of the preliminary active pattern is partially exposed. A portion of the exposed portion of the preliminary active pattern is partially removed to provide an active pattern that defines a recessed portion beneath the spacer. A buried insulating layer is formed in the recessed portion of the active pattern. Related devices are also provided.

REFERENCES:
patent: 5620912 (1997-04-01), Hwang et al.
patent: 6403482 (2002-06-01), Rovedo et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 6949482 (2005-09-01), Murthy et al.
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patent: 2005/0012146 (2005-01-01), Murthy et al.
patent: 2005/0224867 (2005-10-01), Huang et al.

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