Methods of forming semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S197000, C438S268000, C438S301000, C438S306000

Reexamination Certificate

active

07351622

ABSTRACT:
A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas. The first source gas includes n-type or p-type impurity elements, and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region.

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