Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-01
2008-04-01
Ullah, Akm (Department: 4137)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S268000, C438S301000, C438S306000
Reexamination Certificate
active
07351622
ABSTRACT:
A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas. The first source gas includes n-type or p-type impurity elements, and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region.
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Buh Gyoung-Ho
Lee Jin-Wook
Park Tai-su
Ryoo Chang-Woo
Shin Yu-gyun
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Swanson Walter
Ullah Akm
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