Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2008-01-10

2011-10-25

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S689000, C438S773000, C438S706000, C257S336000

Reexamination Certificate

active

08043911

ABSTRACT:
The invention includes methods of forming semiconductor constructions in which a single etch is utilized to penetrate through a titanium-containing layer and partially into a silicon-containing layer beneath the titanium-containing layer. The etch can utilize CH2F2. The silicon-containing layer can contain an n-type doped region and a p-type doped region. In some methods, the silicon-containing layer can contain an n-type doped region laterally adjacent a p-type doped region, and the processing can be utilized to form a transistor gate containing n-type doped silicon simultaneously with the formation of a transistor gate containing p-type doped silicon.

REFERENCES:
patent: 6103631 (2000-08-01), Soda et al.
patent: 7030499 (2006-04-01), Hermes
patent: 7119024 (2006-10-01), Fishburn et al.
patent: 7341951 (2008-03-01), Keller
patent: 2001/0044214 (2001-11-01), Izawa
patent: 2002/0006715 (2002-01-01), Chhagan et al.
patent: 2003/0143864 (2003-07-01), Tanabe et al.
patent: 2003/0234422 (2003-12-01), Wang et al.
patent: 2006/0060904 (2006-03-01), Hong
patent: 2006/0183308 (2006-08-01), Zhang et al.
patent: 2007/0056926 (2007-03-01), Ko
Hori et al. (IEEE Transactions on Electron Devices, vol. 40, No. 9, Sep. (1993), pp. 1675-1681).

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