Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-15
2008-12-30
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S601000, C257SE23149
Reexamination Certificate
active
07470590
ABSTRACT:
The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.
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Juengling Werner
McDonald Steven M.
Parekh Kunal R.
Ghyka Alexander G
Micro)n Technology, Inc.
Patel Reema
Wells St John PS
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