Methods of forming semiconductor constructions

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S601000, C257SE23149

Reexamination Certificate

active

07470590

ABSTRACT:
The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.

REFERENCES:
patent: 5221640 (1993-06-01), Sato
patent: 5821160 (1998-10-01), Rodriguez et al.
patent: 5972756 (1999-10-01), Kono et al.
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 2001/0030169 (2001-10-01), Kitagawa et al.
patent: 2001/0055848 (2001-12-01), Minn et al.
patent: 2004/0140501 (2004-07-01), Kim
patent: 2004/0245598 (2004-12-01), Yamaguchi

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