Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-10
2006-01-10
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S509000, C438S962000
Reexamination Certificate
active
06984560
ABSTRACT:
Methods of forming quantum dots in semiconductor devices are disclosed. One example method includes adsorbing metal clusters on a silicon substrate by controlling density thereof, growing silicon by heating the substrate on which the metal clusters are adsorbed, and removing the metal clusters. The example method further includes forming a silicon oxide layer on the substrate and depositing polysilicon on the oxide layer and patterning the polysilicon and the oxide layer.
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Dang Phuc T.
DongbuAnam Semiconductor Inc.
Hanley Flight & Zimmerman LLC
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