Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2005-12-13
2005-12-13
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C257S077000
Reexamination Certificate
active
06974720
ABSTRACT:
Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
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Carter, Jr. Calvin H.
Hobgood Hudson McDonald
Jenny Jason Ronald
Paisley Michael James
Sumakeris Joseph John
Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Nguyen Cuong
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