Methods of forming polysilicon-comprising plugs and methods...

Details Methods of forming polysilicon-comprising plugs and methods... Methods of forming polysilicon-comprising plugs and methods...

2005-04-14

2008-12-16

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21046

Reexamination Certificate

active

07465650

ABSTRACT:
This invention includes methods of forming plugs containing polysilicon, and methods of forming FLASH memory circuitry. In one implementation, a method of forming a plug containing polysilicon includes providing a substrate having an opening formed therein. Polysilicon is formed within the opening to less than fill the opening. The polysilicon within the opening is exposed to an atmosphere containing H2and a temperature of at least 500° C. After such exposing, metal is formed within the opening over the polysilicon. Other aspects and implementations are contemplated.

REFERENCES:
patent: 7157327 (2007-01-01), Haupt
patent: 2005/0009272 (2005-01-01), Chen et al.
patent: 2006/0022239 (2006-02-01), Mouli
patent: 2006/0115934 (2006-06-01), Kim et al.
Quirk, Michael and Serda, Julian, “Semiconductor Manufacturing Technology”, 2001, Prentice Hall, pp. 300 and 480.

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