Methods of forming pairs of transistors, and methods of forming

Details Methods of forming pairs of transistors, and methods of forming Methods of forming pairs of transistors, and methods of forming

1997-09-22

1999-11-23

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438217, 438275, 438753, H01L 218238

Patent

active

059899484

ABSTRACT:
The invention encompasses methods of forming pairs of transistor gates. In one aspect, the invention includes a method comprising: a) defining a first region and a second region of a substrate; the first region and second region comprising a first substrate surface and a second substrate surface, respectively; b) improving a lifetime of a low voltage tolerant transistor formed proximate the first substrate surface by cleaning the first substrate surface with a first mixture comprising hydrofluoric acid and hydrochloric acid; c) forming a first transistor gate over the first substrate region and incorporating the first transistor gate into the low-voltage tolerant transistor; and d) forming a second transistor gate over the second substrate region and incorporating the second transistor rate into a high-voltage tolerant transistor. In another aspect, the invention includes a method comprising: a) defining a first region and a second region of a substrate; the first region and second region comprising a first substrate surface and a second substrate surface, respectively; b) cleaning at least one of the first and second substrate surfaces with a first mixture comprising hydrofluoric acid and hydrochloric acid; c) after cleaning the at least one of the first and second substrate surfaces, forming a first oxide layer over the first and second substrate surfaces; d) removing the first oxide layer from over the first substrate surface while leaving the first oxide layer over the second substrate surface; and e) forming a second oxide layer over the first substrate surface.

REFERENCES:
patent: 5047816 (1991-09-01), Cuevas
patent: 5498578 (1996-03-01), Steele et al.
patent: 5821172 (1998-10-01), Gilmer et al.

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